| PART |
Description |
Maker |
| AT28HC256E-12LM_883 AT28HC256F-12DM_883 AT28HC256F |
256 (32K x 8) High-speed Parallel EEPROM
|
ATMEL Corporation
|
| P4C1256-15SMLF P4C1256-15JMBLF P4C1256-25JMBLF P4C |
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 35 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, PDIP28
Automotive Relays; V23232A0001X005-EV-808 ( Tyco Electronics )
|
Pyramid Semiconductor Corporation
SRAM
Pyramid Semiconductor, Corp.
|
| IDT7007L55G IDT7007L55GB IDT7007L55GI IDT7007L15J |
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM
LCD BACKLIGHT INVERTER DRIVE IC; Package: SOIC-Wide; No of Pins: 20; Container: Tape & Reel
High Side Gate Driver; Package: SOIC; No of Pins: 8; Container: Rail
ER 19C 19#12 PIN RECP
ER 3C 3#16S PIN RECP THRMO
ER 6C 6#16S SKT RECP 高2K的8双端口静态RAM
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 35 ns, PQFP80
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 高2K的8双端口静态RAM
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 25 ns, PQCC68
HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 25 ns, PQFP80
|
Integrated Device Techn...
Integrated Device Technology, Inc.
http://
|
| IDT70V07L55G IDT70V07S55G IDT70V07L55PF |
400V N-Channel MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 32K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 55 ns, PQFP80
|
Integrated Device Technology, Inc.
|
| WS57C71C-3 WS57C71C-5 WS57C71C-55JI WS57C71C-55J W |
HIGH SPEED 32K x 8 CMOS PROM/RPROM 高2K的8的CMOS胎膜早破/ RPROM
MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM
WS57C71C HIGH SPEED 32K X 8 CMOS PROM/RPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
N.A.
ST Microelectronics
|
| IDT70V3379S6PRFI IDT70V3379S IDT70V3379S4BC IDT70V |
From old datasheet system
HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 32K X 18 DUAL-PORT SRAM, 6 ns, PBGA256
HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 32K X 18 DUAL-PORT SRAM, 6 ns, PQFP128
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| M48T39YPM M48T39Y M48T39Y-100PM1 M48T39Y-150PM1 |
256 Kb 32K x8 TIMEKEEPER SRAM
DIODE ZENER SINGLE 500mW 3.9Vz 20mA-Izt 0.05 10uA-Ir 1 SOD-123 3K/REEL 256 KB2K的x8 SRAM的计时器
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| 709179L12PF IDT709179L 709179L12PFI 709179L7PF 709 |
32K x 9 Sync, Dual-Port SRAM, PipeLined/Flow-Through
HIGH-SPEED 32K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 32K X 9 DUAL-PORT SRAM, 9 ns, PQFP100
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
|
