Part Number Hot Search : 
UF5400 HPR112C UF4007 SVM860V P4456 LMX321 2SC47 012280
Product Description
Full Text Search

2SK3447TZ-E - Silicon N Channel Power MOS FET Power Switching

2SK3447TZ-E_4340578.PDF Datasheet


 Full text search : Silicon N Channel Power MOS FET Power Switching
 Product Description search : Silicon N Channel Power MOS FET Power Switching


 Related Part Number
PART Description Maker
2SK1611 V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
Panasonic Semiconductor
http://
2SJ483 Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
HITACHI[Hitachi Semiconductor]
2SJ517 Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
HITACHI[Hitachi Semiconductor]
MP4203 TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
Toshiba Semiconductor
2SJ552 2SJ552L 2SJ552S 2SJ552L/S Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET
HITACHI[Hitachi Semiconductor]
2SK1739A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
Toshiba Semiconductor
Sanyo Semicon Device
HAT2202C HAT2202C-15 Silicon N Channel MOS FET powerswitching
Silicon N Channel MOS FET Power Switching
Renesas Electronics Corporation
RJK0364DPA RJK0364DPA-00-J0 35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
RJK0346DPA RJK0346DPA-00-J0 65 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
2SK1310A EA09774 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
From old datasheet system
RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
Toshiba Semiconductor
RJK1212DNS-00-J5 Silicon N Channel Power MOS FET Power Switching
3 A, 120 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN AND LEAD FREE, PLASTIC, HWSON-8
Renesas Electronics Corporation
RJK0206DPA RJK0206DPA-00-J53 70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics Corporation
 
 Related keyword From Full Text Search System
2SK3447TZ-E transceiver 2SK3447TZ-E sonardyne 2SK3447TZ-E Test 2SK3447TZ-E 器件参数 2SK3447TZ-E Diode
2SK3447TZ-E ocr 2SK3447TZ-E national 2SK3447TZ-E reset 2SK3447TZ-E 中文网站 2SK3447TZ-E nec
 

 

Price & Availability of 2SK3447TZ-E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.9095098972321