| PART |
Description |
Maker |
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BAR63-02L BAR63-02V BAR63-07L4 BAR63-04W BAR63-03W |
Silicon PIN Diodes 硅PIN二极
PIN Diodes - PIN diode for high-speed switching of RF signals
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package
|
INFINEON[Infineon Technologies AG]
|
| CMHD4150 |
SURFACE MOUNT HIGH SPEED SWITCHING DIODE 0.25 A, 50 V, SILICON, SIGNAL DIODE
SURFACE MOUNT HIGH SPEED SWITCHING DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| 1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器，高速开
Silicon Schottky Barrier Diode for Various Detector High Speed Switching
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BAV99W BAV99S BAV99B5003 |
Silicon Switching Diode
For high-speed switching applications
|
Infineon Technologies AG
|
| RD0506T-H RD0506T-TL-H RD0506T12 ENA1574B |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| RD0106T-H RD0106T-TL-H RD0106T12 |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMOD4448 CENTRALSEMICONDUCTORCORP-CMOD4448 |
ULTRAminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
|
