Part Number Hot Search : 
24C02B 3528B 28F512 05100 1N5226B 1N5226B 100GN D1010
Product Description
Full Text Search

2SB1132 - Medium Power Transistor

2SB1132_4319735.PDF Datasheet

 
Part No. 2SB1132
Description Medium Power Transistor

File Size 348.64K  /  3 Page  

Maker


Guangdong Kexin Industrial Co.,Ltd



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 2SB1132
Maker: ROHM
Pack: SOT89
Stock: 39590
Unit price for :
    50: $0.08
  100: $0.07
1000: $0.07

Email: oulindz@gmail.com

Contact us

Homepage http://www.kexin.com.cn/html/index.htm
Download [ ]
[ 2SB1132 Datasheet PDF Downlaod from Datasheet.HK ]
[2SB1132 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for 2SB1132 ]

[ Price & Availability of 2SB1132 by FindChips.com ]

 Full text search : Medium Power Transistor


 Related Part Number
PART Description Maker
2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S From old datasheet system
Medium power Transistor(-32V/ -2A)
Medium power Transistor(-32V, -2A) 中等功率晶体管(- 32V的,- 2A型)
Rohm Co., Ltd.
CSD882P CSD882R CSD882 CSD882E CSD882Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
CDIL[Continental Device India Limited]
BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA 60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
NXP Semiconductors
2SC1741AS 2SD1484 2SD1484K A5800323 2SC3359S 2SC33 50V,0.5A medium power transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (50V, 0.5A)
From old datasheet system
Medium Power Transistor (50V/ 0.5A)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五(巴西)总裁| 500mA的一(c)| SPAK
Rohm
ZX5T851A ZX5T851ASTZ ZX5T851ASTOA NPN Med Power Transistor
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE 4500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes Incorporated
C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
Continental Device India Limited
2N3209DCSM Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管(高可靠性、陶瓷表贴封装))
DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
L2SA1036KQLT1G L2SA1036KRLT1G Medium Power Transistor Epitaxial planar type PNP silicon transistor
Leshan Radio Company
B772SSL-X-AE3-R B772SSG-X-AE3-R B772SS09 B772SSG-E MEDIUM POWER LOW VOLTAGE TRANSISTOR
3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
UNISONIC TECHNOLOGIES CO LTD
2SB772SL-X-AA3-R 2SB772S-X-T92-K 2SB772S-X-AB3-R 2 MEDIUM POWER LOW VOLTAGE TRANSISTOR
3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
UNISONIC TECHNOLOGIES CO LTD
2SB118809 2SB1188 2SB1188T100Q Medium power transistor (-32V, -2A)
Medium power transistor (32V, 2A)
Medium power transistor (?2V, ?A)
Rohm
Littelfuse
 
 Related keyword From Full Text Search System
2SB1132 board 2SB1132 описание 2SB1132 isa bus 2SB1132 GaAs Hall Device 2SB1132 international
2SB1132 circuit board 2SB1132 Characteristic 2SB1132 Semiconductor 2SB1132 integrated circuit 2SB1132 specs
 

 

Price & Availability of 2SB1132

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.17444801330566