PART |
Description |
Maker |
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
|
SSM3J14T |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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MAPLST1617-030CF |
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Tyco Electronics
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T491D226K025AT T491D476K016AT EMVY630GTR331MMH0S 2 |
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MTM40N20 |
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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
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|
Freescale (Motorola) Freescale Semiconductor, Inc
|
VN30ABA VN35ABA |
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|
MRF1517NT108 |
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|
Freescale Semiconductor, Inc Freescale Semiconductor...
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|
Freescale Semiconductor, Inc
|
UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|