PART |
Description |
Maker |
EDL5132CBMA-10-E EDL5132CBMA |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
K4X51323PC-8G |
16M x32 Mobile-DDR SDRAM
|
Samsung semiconductor
|
EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存 512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3) 128Mb (16Mx8) DDR 266B (2.5-3-3) 16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
HMT351U6BFR8C-G7 HMT325U6BFR8C-H9 HMT351U7BFR8C-H9 |
512M X 64 DDR DRAM MODULE, DMA240 256M X 64 DDR DRAM MODULE, DMA240 512M X 72 DDR DRAM MODULE, DMA240 128M X 64 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
23L51220-90 |
512M-BIT (16M x 32) MASK ROM WITH PAGE MODE (SSOP ONLY) (for socket solution only)
|
Macronix International Co., Ltd.
|