PART |
Description |
Maker |
MMZ09312B MMZ09312B12 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMG3002NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMA20312BT1 |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor
|
MMG3007NT1 MMG3007NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3010NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3004NT1 MMG3004NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
LL1608-FH1N2S RC0402JR-07430RL GRM1555C1H101JA01 G |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|