| PART |
Description |
Maker |
| 2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 150 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
TT electronics Semelab, Ltd.
|
| PU4316 PU4163 |
2 A, 150 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
4 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| 2SC5346 2SC5346S |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-71VAR 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
|
Panasonic, Corp.
Matsshita / Panasonic
Panasonic Semiconductor
|
| RF1K49223 FN4322 |
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?Power MOSFET
From old datasheet system
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| SLC2222A SLD2369A |
150 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
10 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
MICROSEMI CORP-LAWRENCE
|
| KSD40104 KSD401 KSD401Y KSD401YTU |
NPN Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MMBT1815L-GR-AN3-R MMBT1815-GR-AN3-R MMBT1815-GR-A |
HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| MBRF20H150CTG MBR20H150CTG |
20 A,150 V H-Series Dual Schottky Rectifier 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
SWITCHMODE?/a> Power Rectifier 150 V, 20 A
SWITCHMODE Power Rectifier 150 V, 20 A
SWITCHMODE垄芒 Power Rectifier 150 V, 20 A
|
ON Semiconductor
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3 |
N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| 2SK1085-M |
N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
| 2N6341G |
Bipolar Power TO3 NPN 25A 150V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 25 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
|
