| PART |
Description |
Maker |
| UFZT600TA |
2 A, 140 V, NPN, Si, POWER TRANSISTOR
|
ZETEX PLC
|
| MJ15001G MJ1500105 MJ15002G MJ15002 MJ15001 |
Complementary Silicon Power Transistors 15 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
ONSEMI[ON Semiconductor]
|
| BDY25C.MOD |
6 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA HERMETIC SEALED, METAL, TO-3, 2 PIN
|
TT electronics Semelab, Ltd.
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| 2N6277 2N6275 2N6274 ON0082 |
POWER TRANSISTORS NPN SILICON
From old datasheet system
100, 120, 140, 150 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
|
| 2N5551 2N5550 |
600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Si-Epitaxial Planar Transistors
|
DIOTEC SEMICONDUCTOR AG
http://
|
| SF0140BA03073S |
140 MHz Low Loss SAW Filters
From old datasheet system
140 MHz Filter 18 MHz Bandwidth
|
ICS
Integrated Circuit Systems
|
| APT5014B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
|
