| PART |
Description |
Maker |
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ES0313-10 |
High Power Switch 0.5 GHz to 4 GHz
|
Micronetics, Inc.
|
| EL0093 |
High Power Limiters 2 GHz to 4 GHz
|
Micronetics, Inc.
|
| ES0314-20 |
High Power Switch 2 GHz to 18 GHz
|
Micronetics, Inc.
|
| EL0096 |
High Power Limiters 12 GHz to 18 GHz
|
Micronetics, Inc.
|
| EL0036 |
High Power Limiters 1.25 GHz to 1.35 GHz
|
Micronetics, Inc.
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫，600 W/700 W连续，分之为重点，高功率增益
6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp.
NEC[NEC]
|
| SST12LP15A-QVCE-K SST12LP15A SST12LP15A-QVCE |
2.4 GHz High-Power and High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| SST12CP11-QVCE |
2.4 GHz High-Power and High-Gain Power Amplifier
|
Microchip Technology
|
