| PART |
Description |
Maker |
| SGB30UFSMS SGB30UFSMSS SGB30UFSMSTX SGB30UFSMSTXV |
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
Solid States Devices, Inc
|
| SGB20UF SGB35UF SGB10UF SGB15UF SGB25UF SGB30UF |
60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| R4000F R3500F R5000F R6000F |
0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts 0.2 A, 3500 V, SILICON, SIGNAL DIODE, DO-15
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| 1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N400 |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
|
| HER507 HER504 HER505 HER508 HER502 HER503 HER501 H |
5.0 Amp High Efficient Rectiffiers 50 to 1000 Volts 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
| B82478-A1684-M B82478-A1103-M B82478-A1103-M_1 B82 |
Rated inductance 10 to 1000 mH Rated current 400 to 3500 mA
|
EPCOS[EPCOS]
|
| 1N5394GP 1N5395GP 1N5393GP 1N5399GP 1N5391GP 1N539 |
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
|
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MJW18020 JW18020 MJW18020-D |
NPN Silicon Power Transistors High Voltage Planar 30A 1000 Volts BVces 450 Volts BVceo 250 Watts
|
ONSEMI[ON Semiconductor]
|
| 1N5404GP 1N5402GP 1N5408GP 1N5407GP 1N5400GP 1N540 |
3 Amp Glass Passivated Rectifier 50 - 1000 Volts 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
