PART |
Description |
Maker |
RFP-250375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-20N50TP |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION Aluminum Nitride Terminations
|
ANAREN INC Anaren Microwave
|
PO6-TMP-025-1 PO6-TMLP-025 FL-TMP-025-1 TNC-TMP-1 |
Non-reflective Terminations (N, TNC, SSMA, POB, FL, and PO6) 非(不适用,跨国公司,多址,平衡原则,佛罗里达州,并PO6反射终止 Non-reflective Terminations (N / TNC / SSMA / POB / FL / and PO6) Non-reflective Terminations (N TNC SSMA POB FL and PO6) Non-reflective Terminations (N/ TNC/ SSMA/ POB/ FL/ and PO6)
|
HIROSE ELECTRIC Co., Ltd. Hirose Electric USA, INC. HIROSE[Hirose Electric]
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPT1007 NPT1007-15 |
Gallium Nitride 28V, 200W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
|
NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
RFP-050100-2X50-2 |
Chip Terminations
|
Anaren Microwave
|
RFP-10-50TV |
Flanged Terminations
|
Anaren Microwave
|
|