| PART |
Description |
Maker |
| UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| NTE1056 NTE1449 NTE1453 NTE1862 NTE347 |
Integrated Circuit FM Stereo Multiplex Demodulator
Integrated Circuit Low Noise Eqalizer Amp
Integrated Circuit 2−Channel, Low Noise, Equalizier Amp
Integrated Circuit TV Vertrical Deflection Circuit
Silicon NPN Transistor
|
NTE[NTE Electronics]
|
| TC55VEM208ASTN55 TC55VEM208ASTN40 TOSHIBACORPORATI |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
524,288-WORD BY 8-BIT STATIC RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| TC55V8512J-15 TC55V8512J-12 TC55V8512FT-15 TC55V85 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
From old datasheet system
(TC55V8512J/FT) 8-Bit CMOS SRAM
524,288-WORD BY 8-BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| NTE7154 |
Integrated Circuit Control Circuit for Switch Mode Power Supplies using MOS Transistors
|
NTE[NTE Electronics]
|
| TC59S6404 TC59S6404BFT TC59S6404BFT-10 TC59S6404BF |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| UPD78P083 UPD78P083CU UPD78P083DU UPD78P083GB-3B4 |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD65881GB-P02 UPD65881GB-P02-3BS-A |
MOS Integrated Circuit
|
NEC[NEC]
|
| UPD720112 UPD720112GK-9EU |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| D7004C UPD7004C |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
