| PART |
Description |
Maker |
| STS1NK60Z 9448 S1NK60Z |
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFET
From old datasheet system
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH⑩ Power MOSFET
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH?/a> Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| FCI25N60NF102 FCI25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 125m
N-Channel SupreMOS? MOSFET 600 V, 25 A, 125 mΩ
|
Fairchild Semiconductor
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges
V(rrm): 400V; 25A rectifier bridge
V(rrm): 1200V; 35A rectifier bridge
V(rrm): 100V; 25A rectifier bridge
V(rrm): 1000V; 25A rectifier bridge
V(rrm): 1000V; 10A rectifier bridge
V(rrm): 100V; 10A rectifier bridge
V(rrm): 400V; 10A rectifier bridge
V(rrm): 1200V; 10A rectifier bridge
V(rrm): 50V; 10A rectifier bridge
V(rrm): 200V; 10A rectifier bridge
V(rrm): 600V; 10A rectifier bridge
V(rrm): 800V; 10A rectifier bridge
V(rrm): 1200V; 25A rectifier bridge
V(rrm): 1000V; 35A rectifier bridge
V(rrm): 50V; 25A rectifier bridge
V(rrm): 600V; 25A rectifier bridge
|
IRF[International Rectifier]
|
| IRGBC40K IRGBC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A)
|
IRF[International Rectifier]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND |
From old datasheet system
25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FCA16N60N |
600V N-Channel MOSFET SupreMOS™; 3-TO-3PN 16 A, 600 V, 0.199 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 600V, 16A, 0.170W
|
Fairchild Semiconductor, Corp.
|
| FQP5N60C FQPF5N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5
N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
|
Fairchild Semiconductor
|
| FQI6N60C FQB6N60C FQB6N60CTM |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
