| PART |
Description |
Maker |
| RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| NPT2021-DC-2P2GHZ-50W NPT2021-15 |
Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| DS1808 |
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride 双路对数数字电位
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| TCD-2008B50J-G |
Chip Terminations
|
American Accurate Components, Inc.
|
| RFP-20-50TPR |
Flanged Terminations
|
Anaren Microwave
|
| CHF3020CBF500L |
Power RF Terminations / Resistors
|
Bourns Electronic Solutions
|
|
