PART |
Description |
Maker |
K6F1016U4C |
IC,SRAM,64KX16,CMOS,BGA,48PIN,PLASTIC
|
samsung
|
K6R1016C1D |
IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
Samsung
|
N01L163WC2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
BS616LV1011 BS616LV1011EIP70 BS616LV1011AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16 Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
W49F102Q-45 W49F102P-45 |
EEPROM|FLASH|64KX16|CMOS|TSSOP|40PIN|PLASTIC EEPROM|FLASH|64KX16|CMOS|LDCC|44PIN|PLASTIC 64K X 16 FLASH 5V PROM, 45 ns, PDSO40
|
WINBOND ELECTRONICS CORP
|
CY7C09269V-12AC CY7C09289V-9AI CY7C09379V-12AC CY7 |
Memory : Dual-Ports True Dual-Ported memory cells which allow simultaneous access of the same memory location 3.3V 16K/32K/64K x16/18 Synchronous Dual-Port Static RAM 3.3V 16K/32K/64K x 16/18 Synchronous Dual-Port Static RAM SYNC SRAM|32KX18|CMOS|QFP|100PIN|PLASTIC SYNC SRAM|64KX16|CMOS|QFP|100PIN|PLASTIC SYNC SRAM|32KX16|CMOS|QFP|100PIN|PLASTIC SYNC SRAM|16KX16|CMOS|QFP|100PIN|PLASTIC SYNC SRAM|16KX18|CMOS|QFP|100PIN|PLASTIC 同步静态存储器| 16KX18 |的CMOS | QFP封装| 100引脚|塑料
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor, Corp.
|
BS616LV1016 |
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconductor
|
BS616LV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
K6R1016C1D |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Data Sheet
|
Samsung Electronic
|
CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz 512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
P4C1024-17PC P4C214-17PPC P4C1024-17JC P4C1024-17J |
128K X 8 STANDARD SRAM, 17 ns, PDIP32 PLASTIC, DIP-32 16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52 128K X 8 STANDARD SRAM, 17 ns, PDSO32 SOJ-32 64K X 1 STANDARD SRAM, 10 ns, PDIP22 1K X 4 STANDARD SRAM, 10 ns, PDIP18 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
Performance Semiconductor, Corp. Pyramid Semiconductor, Corp. PERFORMANCE SEMICONDUCTOR CORP PYRAMID SEMICONDUCTOR CORP
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
|