| PART |
Description |
Maker |
| RL207-TP RL206-TP RL205-TP RL202-TP |
DIODE STD REC 2A 1000V DO15 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
DIODE STD REC 2A 800V DO15 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
DIODE STD REC 2A 600V DO15 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
DIODE STD REC 2A 100V DO15 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15
|
Micro Commercial Components, Corp.
|
| C4D15120H |
Silicon Carbide Schottky Diode Z-Rec Rectifier
|
Cree, Inc
|
| 2SC4476 |
NPN Triple Diffused Planar Silicon Transistor 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
| 2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS.
|
TOSHIBA
|
| 2SC4475 |
NPN Triple Diffused Planar Silicon Transistor 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| 2SC4257 0458 |
NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
|
Sanyo
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
