| PART |
Description |
Maker |
| RFP-250375N4Z50-2 |
Aluminum Nitride Terminations 25 Watts, 50ohm
|
Anaren Microwave
|
| RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPT1010 NPT1010-15 |
Gallium Nitride 28V, 100W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| NPT2022 NPT2022-15 |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| MFE201 MFE202 MFE203 |
N-CHANNEL DUAL-GAE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Motorola, Inc
|
| DS1808 |
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride 双路对数数字电位
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| RFP-100200-4X50-2 |
Chip Terminations
|
Anaren Microwave
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
|
