PART |
Description |
Maker |
M12L32321A-7BG M12L32321A-5.5BG M12L32321A-6BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M52S32321A-7.5BIG M52S32321A-10BIG M52S32321A-6BIG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM RIEMEN SYNCHRON HTD L 305MM B 15MM RIEMEN SYNCHRON HTD L 575MM B 15MM Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits RIEMEN SYNCHRON HTD L 480MM B 30MM RIEMEN SYNCHRON HTD L 560MM B 200MM RIEMEN SYNCHRON HTD L 600MM B 200MM Dual/Triple-Voltage µP Supervisory Circuits RIEMEN SYNCHRON HTD L 640MM B 200MM Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout RIEMEN SYNCHRON HTD L 720MM B 30MM 3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE RIEMEN SYNCHRON HTD L 880MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 200MM RIEMEN SYNCHRON HTD L 450MM B 15MM 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 2-Wire-Interfaced 8-Bit I/O Port Expander with Reset Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE RIEMEN SYNCHRON HTD L 1100MM B 15MM RIEMEN SYNCHRON HTD L 980MM B 15MM RIEMEN SYNCHRON HTD L 1800MM B 15MM RIEMEN SYNCHRON HTD L 1120MM B 30MM RIEMEN SYNCHRON HTD L 1120MM B 200MM RIEMEN SYNCHRON HTD L 1200MM B 200MM RIEMEN SYNCHRON HTD L 1260MM B 200MM RIEMEN SYNCHRON HTD L 1600MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 30MM RIEMEN SYNCHRON HTD L 1420MM B 15MM RIEMEN SYNCHRON HTD L 1600MM B 30MM RIEMEN SYNCHRON HTD L 1270MM B 15MM RIEMEN SYNCHRON HTD L 1200MM B 30MM RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米 RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米 RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米 RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd. Amphenol, Corp. Rubycon, Corp.
|
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
M12L16161A-5TG M12L16161A-7BG M12L16161A-7TG M12L1 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
T431616D T431616D-5C T431616D-5CG T431616D-5S T431 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
Taiwan Memory Technology
|
M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D1 |
512K x 16Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory ... Elite Semiconductor Memory Technology Inc.
|
A43L0616AV-5.5 |
5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
T436432B-7SG T436432B-55SG T436432B-5SG T436432B-6 |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology http:// Taiwan Memory Technolog...
|
M52D16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
|
Elite Semiconductor Memory Technology, Inc.
|