| PART |
Description |
Maker |
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册，S波段功率GaAs场效应晶体管
0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HWL26NPA |
L-Band GaAs POWER FET
|
Hexawave, Inc
|
| NE6510179 NE6510179A NE6510179A-T1 |
1 W L-BAND POWER GaAs HJ-FET
|
NEC[NEC]
|
| HWL34YRA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
