| PART |
Description |
Maker |
| HWL26YC |
L-Band Power FET Via Hole Chip
|
Electronic Theatre Controls, Inc.
|
| HWL30NC |
L-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
| HWL34NC |
L-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
| HWL27NC |
L-Band Power FET Via Hole Chip
|
Hexawave, Inc
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册，S波段功率GaAs场效应晶体管
0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| FLC167WF |
C-Band Power GaAs FET
|
Fujitsu Component Limited.
|
| HWF1686RA |
5.4 W L-band GaAs power FET
|
HEXAWAVE
|
