| PART |
Description |
Maker |
| ISL2110 ISL2110ABZ ISL2110AR4Z ISL2111 ISL2111ABZ |
100V, 3A/4A Peak, High Frequency Half-Bridge Drivers
|
Intersil Corporation
|
| ISL2101AABZ |
100V, 2A Peak, High Frequency Half-Bridge Drivers
|
Intersil Corporation
|
| HIP2100 HIP2100IB |
100V/2A Peak/ Low Cost/ High Frequency Half Bridge Driver
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
|
INTERSIL[Intersil Corporation]
|
| SC261 SC260 SC2603 SC260D SC260M SC260M3 SC261B SC |
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 200 V.
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 600 V.
Triac. Bidirectional triode thyristor. 25A RMS. Repetitive peak off-state voltage 400 V.
Triacs Bidirectional Triode Thyristors
|
MOTOROLA[Motorola, Inc]
|
| SBT250-10JS |
100V, 25A Rectifi er
|
Sanyo Semicon Device
|
| ISL2110AR4Z ISL2111ARTZ |
100V, 3A/4A Peak, High Frequency Half-Bridge Drivers 4 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO12
|
Intersil, Corp.
Intersil Corporation
|
| GBJ25005-G GBJ2501-G GBJ2502-G GBJ2504-G |
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=25A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=25A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=25A
Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=25A
|
Comchip Technology
|
| FSF150D FSF150R |
25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
25A/ 100V/ 0.070 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil Corporation
|
| RJK1053DPB-15 RJK1053DPB-13 |
100V, 25A, 13m?max Silicon N Channel Power MOS FET Power Switching
100V, 25A, 13m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK1056DPB RJK1056DPB-15 |
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
100V, 25A, 14m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
|
