| PART |
Description |
Maker |
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| DVJR2225-LF DVJR1.050-LF DVJR4.735-LF DVJR4.750-LF |
SURFACE MOUNT ELECTROLYTIC 105C REDUCED SIZE DVJR
ELECTROLYTIC 105°C REDUCED SIZE
|
Dubilier
|
| SI6820DQ |
N-Channel Reduced Qg / MOSFET with Schottky Diode
From old datasheet system
N-Channel, Reduced Qg, MOSFET with Schottky Diode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| NZG50-20K |
Legacy 100 Hz to 20 kHz
|
Micronetics, Inc.
|
| NZG50-1M |
Legacy 100 Hz to 1 MHz
|
Micronetics, Inc.
|
| NMA2103-A2S |
Legacy 100 Hz to 1 MHz
|
Micronetics, Inc.
|
| NMA2006-A1D |
Legacy 100 Hz to 30 MHz
|
Micronetics, Inc.
|
| NMA2005-A2S |
Legacy 100 Hz to 10 MHz
|
Micronetics, Inc.
|
| NMA2108-A1E |
Legacy 1 kHz to 300 MHz
|
Micronetics, Inc.
|
| NMA2108-A2S |
Legacy 1 kHz to 300 MHz
|
Micronetics, Inc.
|
|
