| PART |
Description |
Maker |
| SPL-94B73B-WG |
ITU-T G.984.2 G-PON CLASS B Digital Diagnostic SC SFP OLT Transceiver 3.3V / 2.488 Gbps 1490 nm Continuous-Mode TX / 1.244 Gbps 1310 nm Burst-Mode RX
|
Optoway Technology Inc
|
| VSC7716 |
1.25 Gbps Burst Mode Transimpedance Amplifier for GE-PON (EPON) Systems
|
Vitesse Semiconductor Corporation
|
| NU-73B94B-PG NU-73B94B-P-AG |
3.3.244 Gbps310纳米突发模式德克萨斯 2.488 Gbps490纳米连续收发2X5 SFF封装，ITU - TG.984.2 BG - PON的ONU的收发器
3.3V, 1.244 Gbps 1310 nm Burst-Mode TX / 2.488 Gbps 1490 nm Continuous RX 2X5 SFF Package, ITU-T G.984.2 Class B G-PON ONU Transceiver 3.3.244 Gbps310纳米突发模式德克萨斯 2.488 Gbps490纳米连续收发2X5 SFF封装，ITU - T的G.984.2 B级G - PON的ONU的收发器
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| NU-73D74D-PG NU-73D74D-RG |
Open air current sense resistor: Through hole, 1W@85°C, .050Ω, 5%, ±20ppm/°C, lead-free
3.3V, 1.25 Gbps 1310 nm Burst-Mode TX / 1.25 Gbps 1490 nm Continuous RX 2X5 SFF Package, GE-PON 1000BASE-PX10-U ONU Transceiver 3.3.25 Gbps310纳米突发模式德克萨斯 1.25 Gbps490纳米连续收发2X5 SFF封装，GE - PON的个1000BASE - PX10 - ü的ONU收发
Open air current sense resistor: Through hole, 1W@85°C, .050Ω, 5%, ±20ppm/°C, lead-free 3.3.25 Gbps310纳米突发模式德克萨斯 1.25 Gbps490纳米连续收发2X5 SFF封装，GE - PON的个1000BASE - PX10 - ü的ONU收发
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| NU-33B54B-P-A NU-33B54B-R-A |
155 Mbps 1310 nm Burst Mode TX / 622 Mbps 1490 nm Continuous-Mode RX 3.3V, 2X5 SFF Package, Class B B-PON ONU Transceiver
|
Optoway Technology Inc.
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| S75NS128N |
Burst-mode Multiplexed Flash
|
SPANSION
|
| PCD5043 PCD5043H |
DECT burst mode controller
|
PHILIPS[Philips Semiconductors]
|
| C-15-1250AC-TDFB3-SSC4C C-15-1250AC-TDFB3-SSC2C |
1.25 Gbps Single Mode Transceiver
|
Source Photonics, Inc.
|
| S29CD016J1JFAM033 S29CD016J1JFAM133 S29CD016J0JFAM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 32/16兆位的CMOS 2.6伏或3.3伏，只有同时写，双启动，突发模式闪存记忆体与VersatileI /输出
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
