| PART |
Description |
Maker |
| ADN3000-06 |
6.144 Gbps Transimpedance Amplifier with Integrated Photodiode
|
Analog Devices
|
| AK4864G AK4864S AK4864W AK4864Z AK69256S AK688192Z |
262,144 X 8 Bit MOS Dynamic Random Access Memory 262,144 × 8位马鞍山动态随机存取存储器
|
Accutek Microcircuit Corporation
Accutek Microcircuit, Corp.
|
| SPS-4340RW-CXX0G SPS-4340RW-15 |
6.144 Gbps / CWDM / 40 km Digital Diagnostic Multi-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| SPB-4910BRLWG SPB-4910ARLWG SPB-4910RLWG |
6.144 Gbps / 1330 nm TX / 1270 nm RX / 10 km Digital DiagnosticMulti-Rate CPRI SMSFP
|
http://
Optoway Technology Inc
|
| IS28F020BVB-120T IS28F020BVB-120TI IS28F020BVT-120 |
262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY
** MISC CRYSTALS **
CRYSTAL 9.8304MHZ 20PF SMD
G1 NON-802.15.4 2.4GHZ 262,144 × 8 SmartVoltage引导块闪
|
Integrated Silicon Solution, Inc.
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| M57715 M57715R 57715R |
144-148MHz 12.5V /13W /FM MOBILE RADIO
144-148MHz 12.5V,13W,FM MOBILE RADIO
144-148MHZ, 12.5V, 13W, FM MOBILE RADIO
144-148MHz 12.5V13WFM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| M57747 |
144-148 MHz 12.5V, 13W, FM MOBILE RADIO
144-148MHz, 12.5V, 13W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| M57727 57727 |
144-148MHz 12.5V /37W /SSB MOBILE RADIO
144-148MHz 12.5V,37W,SSB MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
