PART |
Description |
Maker |
SFH4289 |
GaAlAs-IR-Lumineszenzdiode in SMT-Geh漉se mit Linse GaAlAs Infrared Emitter in SMT Package with lens 发动器红外光在SMT Lumineszenzdiode,盖赫锓林斯本身麻省理工学院在SMT封装的GaAIAs红外发射器与镜头
|
Electronic Theatre Controls, Inc. ETC OSRAM GmbH
|
126244 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
126264 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
127141L |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
124141H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
115161H |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
126284 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
123144H |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62703Q0148 Q62703Q0256 Q62703Q0833 Q62703Q0838 |
IR-Lumineszenzdiode Infrared Emitter
|
OSRAM GmbH
|
Q62703Q0517 |
GaAIAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
Q62702P5302 Q62702P5303 SFH4881 |
IR-Lumineszenzdiode (880 nm) im TO-46-Geh?use
|
OSRAM GmbH
|