| PART |
Description |
Maker |
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| OPE5294 |
GaAs Infrared Emitter
|
OPTEK Technologies
|
| SFH401 |
GaAs INFRARED EMITTER
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
|
| SFH425 SFH42001 SFH420 |
GaAs Infrared Emitter in SMT Package
|
OSRAM GmbH
|
| LD242E7800 Q62703-Q3509 LD242 LD242-2 LD242-3 Q627 |
GaAs Infrared Emitter
DSUB 11X1 M PCB G30 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
|
| MTE8080F |
Infrared Emitter
5mm Water Clear Truncated IR Emitter
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
