| PART |
Description |
Maker |
| LD7215D LD7215 LD7215C |
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION
|
NEC[NEC]
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫，600 W/700 W连续，分之为重点，高功率增益
6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp.
NEC[NEC]
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CGD1044H09 CGD1044H |
1 GHz, 25 dB gain high output power doubler
|
NXP Semiconductors
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SST12LF09-Q3CE |
2.4 GHz High-Gain, High-Efficiency Front-end Module
|
Microchip Technology
|
| RFMA1720-1W-Q7 |
17.7 - 19.7 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA1214-1W-Q7 |
12.50 - 14.50 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| AMMP-5620 AMMP-5620-BLKG AMMP-5620-TR1G AMMP-5620- |
6 20 GHz High Gain Amplifier in SMT Package
|
AVAGO TECHNOLOGIES LIMITED
|
