| PART |
Description |
Maker |
| 1N964B 1N991B 1N957B 1N957B_04 1N958B 1N959B 1N960 |
15V, 0.5W Zener Diode
33V, 0.5W Zener Diode
10V, 0.5W Zener Diode
12V, 0.5W Zener Diode
22V, 0.5W Zener Diode
18V, 0.5W Zener Diode
16V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
Half Watt Zeners
Zeners General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| BZX55C2V4 BZX55C39 BZX55C43 BZX55C56 BZX55C9V1 BZX |
Zeners
5.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
33V, 0.5W Zener Diode
4.3V, 0.5W Zener Diode
3.3V, 0.5W Zener Diode
10V, 0.5W Zener Diode
11V, 0.5W Zener Diode
13V, 0.5W Zener Diode
12V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5221B |
Zeners 6.8 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3-32V Dual Operational Amplifier, Ta = 0 to 70°C; Package: Micro8™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 4000
3.9V, 0.35W Zener Diode
27V, 0.35W Zener Diode
6.8V, 0.35W Zener Diode
33V, 0.35W Zener Diode
13V, 0.35W Zener Diode
9.1V, 0.35W Zener Diode
15V, 0.35W Zener Diode
30V, 0.35W Zener Diode
16V, 0.35W Zener Diode
3.3V, 0.35W Zener Diode
20V, 0.35W Zener Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Switching Mode Power Supply Applications
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| H11G1SR2M H11G1SR2VM H11G1TM H11G1TVM H11G2M H11G1 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.4 to 4.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| 1N4701-TAPE 1N4704C 1N4704A 1N4712D 1N4712C 1N4709 |
Diode Zener Single 14V 5% 500mW 2-Pin DO-35 Ammo
Diode Zener Single 17V 2% 500mW 2-Pin DO-35
Diode Zener Single 17V 5% 2-Pin DO-7
Diode Zener Single 28V 1% 500mW 2-Pin DO-35
Diode Zener Single 28V 2% 500mW 2-Pin DO-35
Diode Zener Single 24V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 1% 500mW 2-Pin DO-35
Diode Zener Single 15V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 2% 500mW 2-Pin DO-35
Diode Zener Single 22V 1% 500mW 2-Pin DO-35
Diode Zener Single 25V 1% 500mW 2-Pin DO-35
Diode Zener Single 13V 1% 500mW 2-Pin DO-35
Diode Zener Single 3V 1% 500mW 2-Pin DO-35
Diode Zener Single 39V 1% 500mW 2-Pin DO-35
Diode Zener Single 5.6V 1% 500mW 2-Pin DO-35
Diode Zener Single 8.2V 1% 500mW 2-Pin DO-35
|
New Jersey Semiconductor
|
| DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| E2K-C E2K-C25MY2 |
Long-distance capacitive proximity sensor
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 长途电容式接近传感
|
Omron Electronics LLC
Omron Electronics, LLC
|
| VN340SPTR-E VN340SP-E -VN340SP-E |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.06 to 6.33; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.26 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 四高端智能电源固态继电器
Quad high side smart Power solid state relay
|
EPCOS AG
STMicroelectronics
|
| DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
