PART |
Description |
Maker |
IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A ) HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
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International Rectifier
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IRFI740GLC IRFI740GLCPBF |
Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.7A) Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.7A) HEXFET? Power MOSFET 400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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IRF[International Rectifier]
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IRF3808L IRF3808S RF3808S |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?
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IRF[International Rectifier] International Rectifier, Corp.
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IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.077ohm,身份证\u003d 28A条) Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A) Hexfet? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
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International Rectifier, Corp. IRF[International Rectifier]
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IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
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IRF[International Rectifier]
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IRFIZ34E IRFIZ34EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)
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IRF[International Rectifier]
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IRF9540NSPBF IRF9540NLPBF IRF9540NSTRLPBF IRF9540N |
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A ) HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mΩ , ID = -23A ) Advanced Process Technology
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International Rectifier
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IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A) Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A) HEXFET? Power MOSFET Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
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IRF[International Rectifier]
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IRF640 IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
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IRF[International Rectifier]
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IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A) (IRFR120N / IRFU120N) HEXFET Power MOSFET HEXFET® Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package 9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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IRF[International Rectifier]
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IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D-Pak package -60V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A) Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 5.1A
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IRF[International Rectifier] Samsung semiconductor International Rectifier, Corp.
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