| PART |
Description |
Maker |
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRF3808L IRF3808S RF3808S |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFR9214 IRFU9214 IRFRU9214 |
-250V Single P-Channel HEXFET Power MOSFET in a I-Pak package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)
HA1L-M1C53-G L6 Ovrsz ILL PB Rnd Flsh Mom SPDT 12V LED Sldr
|
IRF[International Rectifier]
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFBG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V/ Rds(on)=5.0ohm/ Id=3.1A)
|
IRF[International Rectifier]
|
| IRFD9024 |
-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-1.6A)
|
IRF[International Rectifier]
|
| IRF7726 IRF7726TR |
Ultra Low On-Resistance
Power MOSFET(Vdss=-30V)
HEXFET? Power MOSFET
-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
|
IRF[International Rectifier]
|
| IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
