| PART |
Description |
Maker |
| GT8G134 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT10G131 GT10.131 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT25G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT25G101SM E001917 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| CT30TM-8 |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
| GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
| CY25BAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
