| PART |
Description |
Maker |
| W9425G8EH |
8M × 4 BANKS × 8 BITS DDR SDRAM
|
Winbond
|
| W9464G6JH |
1M X 4 BANKS X 16 BITS DDR SDRAM
|
Winbond
|
| W9412G6IH |
2M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9425G6EH0812 |
4 M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9412G6CH |
2M 】 4 BANKS 】 16 BITS DDR SDRAM
|
Winbond
|
| EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
| W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM
1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
|
Winbond Electronics Corp
http://
Winbond Electronics, Corp.
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存
512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
| IS42S1640008 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS45S16400E-6TLA1 IS45S16400E-7TLA1 IS45S16400E-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| 42S16400A IS42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
