| PART |
Description |
Maker |
| STLC2690 STLC2690WTR |
Bluetooth V2.1 and FM RDS transceiver system-on-chip
|
STMicroelectronics
|
| BCM2048 |
BLUETOOTH 2.0 EDR SINGLE-CHIP HCI SOLUTION WITH INTEGRATED FM RDS RADIO RECEIVER
|
Broadcom Corporation.
|
| BCM20706UA1KFFB1G |
Embedded Bluetooth 4.2 SoC with MCU, Bluetooth Transceiver, and Baseband Processor
|
Cypress Semiconductor
|
| 2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
| NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| KDW2503N |
5.5 A, 20 V. RDS(ON) = 0.021 Fast switching speed High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| SSG4502CE |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
|
SeCoS Halbleitertechnologie GmbH
|
| MCRF355 MCRF360 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
The MCRF360 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features operating at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran
|
Microchip
|
