| PART |
Description |
Maker |
| MCH5812 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| ES6U2 |
1.5V Drive Nch SBD MOSFET
|
Rohm
|
| QS5U36 |
1.5V Drive Nch SBD MOSFET
|
Rohm
|
| CPH6616 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| FTD8004 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| US5U1 |
2.5V Drive Nch SBD MOS FET
|
ROHM[Rohm]
|
| QS5U121 |
2.5V Drive Nch SBD MOS FET
|
Rohm
|
| SCH2807 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| FS70UMJ-2 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 100 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| CPH5846 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5863 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2811 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
