PART |
Description |
Maker |
HYB18M512160BFX HYB18M512160BFX-7.5 |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM
|
Qimonda AG
|
HYB18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
|
Qimonda AG
|
HYB18L128160BC-7.5 HYE18L128160BC-7.5 HYB18L128160 |
DRAMs for Mobile Applications 128-Mbit Mobile-RAM
|
Qimonda AG
|
HYE18L512160BF-7.5 HYB18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
Qimonda AG
|
HYB18L128160BC-7.5 HYB18L128160BF-7.5 HYB18L128160 |
DRAMs for Mobile Applications Very low Power SDRAM optimized for battery-powered, handheld applications ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
Infineon Technologies A... Infineon Technologies AG
|
MOC |
Applications: Wired Network, Automotive, Mobile Communication, WiMAX, WLAN, Mobile
|
MERITEK ELECTRONICS COR...
|
SD1134-05 1134-5 |
Multiconductor Cable; Number of Conductors:1; Conductor Size AWG:26; No. Strands x Strand Size:7 x 34; Jacket Material:Teflon; Approval Bodies:UL NEC/CUL,CEC; Conductor Material:Copper; Features:MIL-W-16878/4 (Type E) RoHS Compliant: Yes RF & Microwave Transistors VHF Portable/Mobile Applications(用于甚高频通信的RF和微波晶体管) VHF PORTABLE/MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
|
RAD-900-ANT-OMNI-2-N |
For freely mobile applications
|
PHOENIX CONTACT
|
MS1202 |
RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS
|
Microsemi Corporation
|
MS1406 |
RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS
|
Advanced Power Technolo... Advanced Power Technology
|
SD1018 |
RF AND MICROWAVE TRANSISTORS VHF AND FM MOBILE APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
SD1422 |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
|
ADPOW[Advanced Power Technology]
|