PART |
Description |
Maker |
CY7C346B04 CY7C346B-25HC_HI CY7C346B-25RC_RI CY7C3 |
128-Macrocell MAX® EPLD 128-Macrocell MAX垄莽 EPLD 128-Macrocell MAX庐 EPLD 128-Macrocell MAX? EPLD 128-Macrocell MAX㈢ EPLD 128-Macrocell MAX EPLD
|
Cypress Semiconductor
|
CY7C346 CY7C346-25 CY7C346-25HC CY7C346-25HI CY7C3 |
USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD) 128-Macrocell MAX® EPLD USE ULTRA37000TM FOR ALL NEW DESIGNS(128-Macrocell MAX EPLD)
|
CYPRESS[Cypress Semiconductor]
|
CY7C342 CY7C342-25 CY7C342-30 CY7C342-35 CY7C342B |
128-Macrocell MAX EPLDs 128宏单元最EPLDs 128-Macrocell MAX EPLDs OT PLD, 40 ns, PQCC68 128-Macrocell MAX EPLDs OT PLD, 25 ns, PQCC68 128-Macrocell MAX EPLDs UV PLD, 40 ns, CQCC68 ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) 128-Macrocell MAX® EPLD
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262, 144-Word x 16-Bit Dynamic Random Access Memory x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor] ITT, Corp.
|
EP600 |
16-Macrocell EPLD
|
Altera
|
EP310 |
8 Macrocell EPLD
|
Altera
|
EH3500ETTS-6.144M |
OSCILLATORS 100PPM -40 85 5.0V 4 6.144MHZ TS CMOS 5.0X3.2MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 6.144 MHz, CMOS OUTPUT
|
Ecliptek, Corp.
|
TC55V16256FT-12 TC55V16256FT-15 TC55V16256J TC55V1 |
262,144-WORD BY 16-BIT CMOS STATIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TC55VZM216AJJI-08 TC55VZM216AFTI-08 TC55VZM216AFTI |
262,144-WORD BY 16-BIT CMOS STATIC RAM
|
TOSHIBA
|
CY7C341-25HC CY7C341B-25HC CY7C341-25JC CY7C341-30 |
192-Macrocell MAX® EPLD
|
Cypress
|