| PART |
Description |
Maker |
| VC-VE8850A |
UTILIZING HIGH FREQUENCY FUNDAMENTAL CRYSTAL DESIGN
|
http://
RALTRON[Raltron Electronics Corporation]
|
| ENV-05DB-S2 ENV05DB-S2 |
High Precision Angular Velocity Sensor Utilizing
|
Murata Electronics
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| 15GN01FA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| TLWR992 |
TELUX / Utilizing one of the world brightest (AS) AllnGaP technologies
|
Vaishali Semiconductor
|
| APT35GN120B APT35GN120BG APT35GN120S APT35GN120SG |
Utilizing the latest Non-Punch Through (NPT) Field Stop technology
|
Microsemi Corporation
|
| KBL4005 |
Reliable low cost construction utilizing molded plastic technique
|
Sangdest Microelectroni...
|
| VXO-1S-DSM-6P |
High frequency SMD VCXO LVDS Output frequency up to 700 MHz
|
QUARTZCOM the communications company
|
| 2SC1815-X-T92-A-K 2SC1815-BL-T92-E-K 2SC1815-GR-T9 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
