| PART |
Description |
Maker |
| TSOP7000SW1 |
IR Receiver for High Data Rate PCM at 455 kHz
|
VAISH[Vaishali Semiconductor]
|
| TSOP5700 |
IR Receiver for High Data Rate PCM at 455 kHz
|
VISAY[Vishay Siliconix]
|
| EVAL-ADN2817EBZ ADN2817 ADN2818 EVAL-ADN2818EBZ |
Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery ICs
Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery IC (With High Sensitivity Limiting Amp)
|
Analog Devices
|
| SHD-4135-XXX |
High Data Rate Optocoupler
|
Sensitron
|
| K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| TXC101 |
Multi-channel High data rate Programmable
|
RFM[RF Monolithics, Inc]
|
| 1064111050 |
QSFP to QSFP Fourteen Data Rate PSM4 Active Optical Cable, 56 Gbps Data Rate
|
Molex Electronics Ltd.
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M14D2561616A-2E |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
