| PART |
Description |
Maker |
| CDLL935 CDLL936 CDLL936A CDLL937A CDLL937B CDLL938 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 温补参考稳压二极管
Temperature Compensated Zener Reference Diodes(温度补偿齐纳基准二极 参考温度补偿齐纳二极管（温度补偿齐纳基准二极管
9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
Microsemi, Corp.
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
|
Motorola
|
| MPXM2202 MPXM2202A MPXM2202AS MPXM2202AST1 MPXM220 |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200 KPA ON CHIP TEMPERATURE COMPENSATED & CALIBRATED SILICON PRESSURE SENSORS
|
Motorola, Inc.
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| 2SC396404 |
Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage
2 A, 40 V, NPN, Si, POWER TRANSISTOR
Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage
|
Toshiba Semiconductor
|
| TPT-13-6036 TPT-13-6026 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-8-2015 CPT-8-2014 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-13-6015 TPT-13-6014 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| 6755 6756 |
TEMPERATURE COMPENSATED
|
Vectron International, Inc
|
| CMT-8-2003 |
Temperature Compensated Amplifier
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| ECS-500-144-B ECS-500 |
TEMPERATURE COMPENSATED OSCILLATOR
|
ECS, Inc.
|
| MPXV5050G MPX5050 |
MPX5050 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Motorola
|
