| PART |
Description |
Maker |
| TPCA8102 |
MOSFET TPC Series
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8114 |
MOSFET TPC Series
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
|
Toshiba Corporation
|
| 2SK3569 |
MOSFET 2SK/2SJ Series
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
| MRF9045M |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc.
|
| MRF186 |
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET
|
Motorola, Inc
|
| ATT3030 |
(ATT3000 Series) High Performance Field Programmable Gate Arrays
|
AT & T
|
| STP80NF03L-04 STP80NF03 -STP80NF03 |
N - CHANNEL POWER MOSFET
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Metal; Series:PC C-26482 Series I; No. of Contacts:3; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
N-CHANNEL 30V - 0.0034 ohm - 80A TO-220 STripFET POWER MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STGW40M120DF3 |
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
|
ST Microelectronics
|
| STGWT40H65FB STGW40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| STGW40V60DF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
