PART |
Description |
Maker |
HMC478MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4.0 GHz
|
Hittite Microwave Corporation
|
HMC482ST89E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 5.0 GHz
|
Hittite Microwave Corporation
|
TGA2509 |
Wideband 1 W HPA with AGC
|
TriQuint Semiconductor
|
TGA2509-EPU-FL TG2509-EPU-FL |
Wideband Packaged HPA with AGC
|
TRIQUINT[TriQuint Semiconductor]
|
ADG904BRUZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20
|
Analog Devices, Inc.
|
BFG520W BFG520W_X BFG520W/X |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体 NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG |
NPN 8 GHz wideband transistors NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
HMC463LP5 |
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
HMC463 |
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
|
Hittite Microwave Corporation
|
0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In... FREESCALE[Freescale Semiconductor, Inc] Motorola
|
AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
35FFL-35F50 |
Ultra-wideband, DC to 33 GHz
|
Mini-Circuits
|