PART |
Description |
Maker |
TDA7333 |
RDS/RBDS PROCESSOR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
SAA6588 SAA6588T |
RDS/RBDS pre-processor
|
PHILIPS[Philips Semiconductors]
|
SAA6588_2 SAA6588/V2 SAA6588T/V2 |
SAA6588; RDS/RBDS pre-processor From old datasheet system
|
Philips
|
BU1920FS BU1920F A5801019 |
RDS / RBDS decoder From old datasheet system
|
ROHM
|
KDS8928A |
N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 -4 A, -20 V RDS(ON) = 0.055 Dual N & P-Channel Enhancement Mode MOSFET
|
TY Semiconductor Co., L... TY Semicondutor
|
IRFR3709ZPBF IRFU3709ZPBF IRFR3709ZTRR IRFR3709ZTR |
30 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mヘ , Qg = 17nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mΩ , Qg = 17nC ) High Frequency Synchronous Buck Converters for Computer Processor Power
|
International Rectifier
|
S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω)) N-Channel N沟道
|
NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
|
S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
SSG4502CE |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
|
SeCoS Halbleitertechnologie GmbH
|
IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
|
Electronic Theatre Controls, Inc. SEME-LAB Seme LAB
|