PART |
Description |
Maker |
TC2896 |
5 W Flange Ceramic Packaged GaAs Power FETs
|
TRANSCOM
|
TC2491 |
0.5 W Flange Ceramic Packaged PHEMT GaAs Power FETs
|
Transcom, Inc.
|
TC2997D |
2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
|
Transcom, Inc.
|
TC2591 |
1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
|
Transcom, Inc.
|
LT3P31W |
┆3mm(T-1), Cylinder Type(Thick Flange), Colored Diffusion, Tape-packaged LED Lamps for Surface Mount
|
SHARP[Sharp Electrionic Components]
|
CLA4601-203 CLA4604-203 CLA4604-219 CLA4602-219 CL |
Silicon Limiter Diodes, Ceramic Hermetic Packaged and Bondable Chips
|
Skyworks Solutions
|
QESM05 |
SMD 5.0x3.2 Crystal - Ceramic SMD packaged
|
TEMEX
|
PS7122A-2A PS7122A-1A PS7122AL-1A PS7122AL-1A-E4 P |
OCMOS FET High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package; A IR2308 packaged in a 8-Lead SOIC Dual Low Side Driver, Inverting Input in a 8-pin DIP package; A IR4426 packaged in a 8-Lead SOIC 1200V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package; A IR2214 packaged in a Lead-Free 24 Lead SSOP FET-OUTPUT OPTOCOUPLER Single High Side Driver, Current Limiting, Programmable Shutdown Error Pin in a 8-pin DIP package; A IR2125 packaged in a Lead-Free 16-Lead SOIC shipped on Tape and Reel Half Bridge Driver, Single Input Plus Inverting Shutdown Pin, Fixed 520ns Deadtime in a 8-pin DIP package; A IR2104 packaged in a Lead-Free 8-Lead PDIP OCMOS场效应管 Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器) 光纤耦合场效应晶体管光电耦合器(简称MOS场效应管输出光光隔离器
|
NEC, Corp.
|
ISL4221E ISL4221EIR ISL4221EIRZ ISL4223E ISL4223EI |
QFN Packaged, 卤15kV ESD Protected, 2.7V to 5.5V, 150nA, 250kbps, RS-232 2.7V to 5.5V, 150nA, 250kbps, RS-232 QFN Packaged, ±15kV ESD Protected, 2.7V to 5.5V, 150nA, 250kbps, RS-232 2.7V to 5.5V, 150nA, 250kbps, RS-232 QFN Packaged, 5kV ESD Protected, 2.7V to 5.5V, 150nA, 250kBps, RS-232 Transmitters/Receivers LINE TRANSCEIVER, PQCC16
|
Intersil Corporation Intersil, Corp.
|
KV1913A KV1933A KV1973A KV2143 KV2153 GC1303 KV212 |
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, 1.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE OPTOCOUPLER 10MBPS OC 5-SOP Tuning Varactors
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
|