| PART |
Description |
Maker |
| TAN350 |
high power COMMON BASE bipolar transistor.
|
ADPOW[Advanced Power Technology]
|
| JTDB25 |
RF Power Transistors: AVIONICS
25 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz 25瓦，36伏特，脉冲航空电子设960 - 1215兆赫
High power COMMON BASE bipolar transistor.
|
Advanced Power Technology
Electronic Theatre Controls, Inc.
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| UMC3NT1 UMC3NT2 UMC5NT1G UMC3NT2G |
Dual Common Base-Collector Bias Resistor Transistors
Dual Common Base−Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| 2SC3121 E000793 |
TRANSISTOR (TV TUNER/ UHF OSCILLATOR/ CONVERTER APPLICATIONS)(COMMON BASE)
TRANSISTOR (TV TUNER, UHF OSCILLATOR, CONVERTER APPLICATIONS)(COMMON BASE)
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON BASE)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| VCMB8117-RC VCMB8102-RC VCMB8105-RC VCMB8118-RC VC |
Common Mode Choke with Base
|
Allied Components International
http://
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| BUL54BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| FZ800R12KS4B2 |
High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency
|
eupec GmbH
|
| BUL54 BUL54A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL55A BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
