PART |
Description |
Maker |
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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SUD50P06-15L |
P-Channel, Tj = 175 °C power MOSFET; low leakage current; P通道,Tj=175℃,低漏电流 P-Channel 60-V (D-S), 175C MOSFET P-Channel 60-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
FDG1024NZ |
Dual N-Channel PowerTrench? MOSFET 20 V, 1.2 A, 175 mΩ Dual N-Channel PowerTrench垄莽 MOSFET 20 V, 1.2 A, 175 m楼?
|
Fairchild Semiconductor
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UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC] NEC Corp.
|
SUD40N06-25L |
N-Channel Enhancement-Mode Trans, Logic Level N-Channel 60-V (D-S), 175C MOSFET, Logic Level N-Channel 60-V (D-S) 175C MOSFET Logic Level
|
VISAY[Vishay Siliconix]
|
TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS MOS Field Effect Transistors SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK3577 2SK3577-T1B 2SK3577-T2B |
N Channel enhancement MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应 N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V. Philips
|
2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
UPA1874B UPA1874BGR-9JG UPA1874BGR-9JG-E1 UPA1874B |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
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