| PART |
Description |
Maker |
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STGW40NC60V |
N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH??IGBT
N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH IGBT
N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH⑩ IGBT
|
??????浣?
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| RURU5060 FN2940 |
50A/ 600V Ultrafast Diode
50A, 600V Ultrafast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STY80NM60N |
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh Power MOSFET
N-channel 600 V - 0.035 ヘ - 80 A - Max247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| PRHMB50A61 |
50A 600V
|
Nihon Inter Electronics Corporation
|
| 6MBI50L-060 |
IGBT(600V 50A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| NGTG50N60FW |
IGBT only 600V 50A PFC
|
ON Semiconductor
|
| STY34NB50F |
N-CHANNEL 500V - 0.11 OHM - 34A - MAX247 POWERMESH MOSFET
|
STMicroelectronics
|
| RJH60D7DPQ-E0-T2 |
600V - 50A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
