| PART |
Description |
Maker |
| STB130NS04ZB STP130NS04ZB STW130NS04ZB STB130NS04Z |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 N通道钳位- 7毫欧- 80A条TO-220/D2PAK/TO-247充分保护MOSFET的网格密
N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED - 8mOhm - 80A TO-220/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STB10NK60ZT4 STB10NK60Z06 STW10NK60Z STP10NK60Z ST |
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH?/a> Power MOSFET
N-channel 600V - 0.65ヘ - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH⑩ Power MOSFET
|
STMicroelectronics
|
| STGP10NB37LZ |
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh IGBT
N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh⑩ IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB20NE06LT4 STB20NE06L |
N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
THERMISTOR, PTC 2.50 OHM .10A 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 20A条（丁）|63AB
|
ST Microelectronics
ON Semiconductor
|
| ISL9V2040S3ST ISL9V2040D3S04 ISL9V2040D3ST ISL9V20 |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| STGB10NB60S STGB10NB60ST4 STGP10NB60S_05 GB10NB60S |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
N-CHANNEL 10A 600V TO-220/TP-220FP/DPAK PowerMESH"IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 N |
Power MOSFET 60 Amps, 60 Volts
60 V, 60 A, N-Channel TO-220 and D2PAK
60 V, 60 A, N−Channel TO−220 and D2PAK
60 V / 60 A / N&Channel TO&220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| SB10100DC-T3 SB1040DC-T3 SB1080DC-T3 SB1060DC-T3 S |
10A D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 10A条D2PAK封装，表面贴装肖特基整流
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| MGP15N43CL |
Internally Clamped N-Channel IGBT
Internally Clamped N-Channel IGBT 15 A, 460 V, N-CHANNEL IGBT, TO-220AB
|
ONSEMI[ON Semiconductor]
|
