| PART |
Description |
Maker |
| TPC8401 |
80 AMP MINI-ISO AUTOMOTIVE RELAY
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPC8204 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3067 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8A03-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| TPCA8A04-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM3K329R-14 |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
|
Toshiba Semiconductor
|
| SSM6J401TU |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TPC8102 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
