| PART |
Description |
Maker |
| M100FG |
10000 V rectifier 10-100 mA forward current,200 ns recovery time
|
Voltage Multipliers, Inc.
|
| 3HVD10RC 6HVP12RCS 6HVP8RCT |
3.5 A, 10000 V, SILICON, RECTIFIER DIODE
4 A, 12000 V, SILICON, RECTIFIER DIODE
4 A, 8000 V, SILICON, RECTIFIER DIODE
|
|
| NE529F NE529H |
COMPARATOR, 10000 uV OFFSET-MAX, CDIP14
COMPARATOR, 10000 uV OFFSET-MAX, MBCY10
|
NXP SEMICONDUCTORS
|
| MIC915 MIC915BMM |
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
10000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
Dual 135MHz Low-Power Op Amp
|
Micrel Semiconductor,Inc.
|
| SP4-2512/883 SP2-2512/883 SP4-2510-2 SP3-2512-2 SP |
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20 CERAMIC, LCC-20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8 METAL CAN-8
OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP8
|
Ecliptek, Corp.
|
| ZFSC-2-10G ZFSC-2-10G1 |
Power Splitter/Combiner 2 Way-0掳 50惟 2000 to 10000 MHz
Power Splitter/Combiner 2 Way-0 50惟 2000 to 10000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 2000 to 10000 MHz
Power Splitter/Combiner 2 Way-0° 50Ω 2000 to 10000 MHz
|
Mini-Circuits
|
| NTD10 |
0.3 A, 10000 V, SILICON, SIGNAL DIODE
|
|
| BYX101GAMO |
0.4 A, 10000 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| HMC611 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
Hittite Microwave Corporation
|
| HMC611LP4E HMC611LP409 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
http://
Hittite Microwave Corporation
|
| SDS0402BL-103M-S |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
YAGEO CORP
|
|
